Electric field effect in correlated oxide systems

被引：611
作者：
Ahn, CH
Triscone, JM
Mannhart, J
机构：
[1] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
[2] Univ Geneva, Dept Condensed Matter Phys, CH-1211 Geneva 4, Switzerland
[3] Univ Augsburg, Inst Phys, Ctr Elect Correlat & Magnetism, D-86135 Augsburg, Germany
来源：
NATURE | 2003年 / 424卷 / 6952期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1038/nature01878
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
Semiconducting field-effect transistors are the workhorses of the modern electronics era. Recently, application of the field-effect approach to compounds other than semiconductors has created opportunities to electrostatically modulate types of correlated electron behaviour-including high-temperature superconductivity and colossal magnetoresistance- and potentially tune the phase transitions in such systems. Here we provide an overview of the achievements in this field and discuss the opportunities brought by the field-effect approach.
引用
收藏
页码：1015 / 1018
页数：4
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