A technique for improving gain and noise figure of common-gate wideband LNAs

被引：14

作者：

Fatin, G. H. Zare ^{[1
,2
]}

Koozehkanani, Z. D. ^{[2
]}

Sjoland, H. ^{[1
]}

机构：

[1] Lund Univ, Dept Elect & Informat Technol, S-22100 Lund, Sweden

[2] Univ Tabriz, Dept Elect & Comp Engn, Tabriz 51666, Iran

来源：

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2010年 / 65卷 / 02期

关键词：

LNA; CMOS; Common-gate; Wideband; Noise-cancelling; Current-reuse; CMOS LNA; DESIGN;

D O I：

10.1007/s10470-010-9482-8

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A technique for improving gain and noise performance of differential wideband common-gate low noise amplifiers is presented. It is based on current bleeding and noise cancellation. An amplifier employing the technique has been designed and simulated in a 90 nm standard CMOS process using a 1 V supply. It has been compared to designs using both basic and cross-coupled common-gate topologies. Simulation results confirm the improvements in gain and noise figure, yielding a superior figure of merit for the new technique.

引用

页码：239 / 244

页数：6