A technique for improving gain and noise figure of common-gate wideband LNAs

被引:14
作者
Fatin, G. H. Zare [1 ,2 ]
Koozehkanani, Z. D. [2 ]
Sjoland, H. [1 ]
机构
[1] Lund Univ, Dept Elect & Informat Technol, S-22100 Lund, Sweden
[2] Univ Tabriz, Dept Elect & Comp Engn, Tabriz 51666, Iran
关键词
LNA; CMOS; Common-gate; Wideband; Noise-cancelling; Current-reuse; CMOS LNA; DESIGN;
D O I
10.1007/s10470-010-9482-8
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A technique for improving gain and noise performance of differential wideband common-gate low noise amplifiers is presented. It is based on current bleeding and noise cancellation. An amplifier employing the technique has been designed and simulated in a 90 nm standard CMOS process using a 1 V supply. It has been compared to designs using both basic and cross-coupled common-gate topologies. Simulation results confirm the improvements in gain and noise figure, yielding a superior figure of merit for the new technique.
引用
收藏
页码:239 / 244
页数:6
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