Investigation of candidate VRM topologies for future microprocessors

被引:295
作者
Zhou, XW [1 ]
Wong, PL
Xu, P
Lee, FC
Huang, AQ
机构
[1] Volterra Co, Fremont, CA 94538 USA
[2] Virginia Polytech Inst & State Univ, Ctr Power Elect Syst, Blacksburg, VA 24061 USA
基金
美国国家科学基金会;
关键词
interleaved; microprocessor; QSW; voltage regulator module;
D O I
10.1109/63.892832
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
By reducing the power supply voltage, faster, lower power consumption, and high integration density data processing systems can be achieved. The current generation high-speed complementary metal-oxide-semiconductor (CMOS) processors (e.g., Alpha, Pentium, Power PC) are operating at above 300 MHz with 2.5 to 3.3 V output range. Future processors will be designed in the 1.1-1.8 V range, to further enhance their speed-power performance, These new generations microprocessors will present very dynamic loads with high current slew rates during transient. As a result, they will require a special power supply, voltage regulator module (VRM), to provide well-regulated voltage, The VRMs should have high power densities, high efficiencies, and good transient performance. In this paper, the critical technical issues to achieve this target for future generation microprocessors are addressed, And a VRM candidate topology, interleaved quasisquare-wave (QSW), is proposed. The design, simulation, and experimental results are presented.
引用
收藏
页码:1172 / 1182
页数:11
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