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Role of Fe3O4 as a p-Dopant in Improving the Hole Injection and Transport of Organic Light-Emitting Devices
被引:15
作者:
Zhang, Dan-Dan
[1
]
Feng, Jing
[1
]
Chen, Lu
[1
]
Wang, Hai
[1
,2
]
Liu, Yue-Feng
[1
]
Jin, Yu
[1
]
Bai, Yu
[1
]
Zhong, Yu-Qing
[1
]
Sun, Hong-Bo
[2
]
机构:
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
[2] Jilin Univ, Coll Phys, Changchun 130023, Peoples R China
关键词:
Fe3O4;
organic light-emitting devices;
p-dopant;
ENERGY-LEVEL ALIGNMENT;
UV PHOTOEMISSION;
INTERFACES;
STABILITY;
D O I:
10.1109/JQE.2011.2107503
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Fe3O4 has been demonstrated to be an efficient p-dopant in improving the performance of organic light-emitting devices. This paper investigates in detail the role of Fe3O4 in improving the hole injection and the hole transport by the ultraviolet/visible/near-infrared absorption, x-ray, and ultraviolet photoelectron spectroscopy. The results demonstrated that Fe3O4 as a p-dopant has different effectiveness when it is doped into different host materials. The improved properties of the OLEDs with the p-doped N, N'-diphenyl-N, N'-bis (1,1'-biphenyl)-4,4'-diamine layer is mainly due to the enhanced hole injection through the lowering of the hole injection barrier, while the enhanced hole transport plays a more important role for the OLEDs with the p-doped 4,4',4"-tris (3-methylphenylphenylamino) triphenylamine due to their higher ability in the formation of charge transfer complex.
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页码:591 / 596
页数:6
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