Role of Fe3O4 as a p-Dopant in Improving the Hole Injection and Transport of Organic Light-Emitting Devices

被引:15
作者
Zhang, Dan-Dan [1 ]
Feng, Jing [1 ]
Chen, Lu [1 ]
Wang, Hai [1 ,2 ]
Liu, Yue-Feng [1 ]
Jin, Yu [1 ]
Bai, Yu [1 ]
Zhong, Yu-Qing [1 ]
Sun, Hong-Bo [2 ]
机构
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
[2] Jilin Univ, Coll Phys, Changchun 130023, Peoples R China
关键词
Fe3O4; organic light-emitting devices; p-dopant; ENERGY-LEVEL ALIGNMENT; UV PHOTOEMISSION; INTERFACES; STABILITY;
D O I
10.1109/JQE.2011.2107503
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Fe3O4 has been demonstrated to be an efficient p-dopant in improving the performance of organic light-emitting devices. This paper investigates in detail the role of Fe3O4 in improving the hole injection and the hole transport by the ultraviolet/visible/near-infrared absorption, x-ray, and ultraviolet photoelectron spectroscopy. The results demonstrated that Fe3O4 as a p-dopant has different effectiveness when it is doped into different host materials. The improved properties of the OLEDs with the p-doped N, N'-diphenyl-N, N'-bis (1,1'-biphenyl)-4,4'-diamine layer is mainly due to the enhanced hole injection through the lowering of the hole injection barrier, while the enhanced hole transport plays a more important role for the OLEDs with the p-doped 4,4',4"-tris (3-methylphenylphenylamino) triphenylamine due to their higher ability in the formation of charge transfer complex.
引用
收藏
页码:591 / 596
页数:6
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