Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings

被引：3

作者：

Tang, Yongjun ^{[1
,2
]}

Feng, Meixin ^{[1
,2
,3
]}

Liu, Jianxun ^{[1
,2
,3
]}

Fan, Shizhao ^{[1
,2
]}

Sun, Xiujian ^{[1
,2
,3
]}

Sun, Qian ^{[1
,2
,3
]}

Zhang, Shuming ^{[1
,2
,3
]}

Liu, Tong ^{[4
]}

Kong, Yaping ^{[4
]}

Huang, Zengli ^{[4
]}

Ikeda, Masao ^{[2
]}

Yang, Hui ^{[1
,2
,3
,4
]}

机构：

[1] Univ Sci & Technol China, Sch Nanotech & Nanobio, Hefei 230026, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobio SINANO, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China

[3] Chinese Acad Sci, SINANO, Guangdong Foshan Branch, Foshan 528000, Peoples R China

[4] Chinese Acad Sci, SINANO, Vacuum Interconnected Nanotech Workstat, Suzhou 215123, Peoples R China

来源：

NANOMATERIALS | 2021年 / 11卷 / 11期

关键词：

narrow linewidth; GaN-on-Si; laser diode; III nitride photonics; etching damage; CONTINUOUS-WAVE OPERATION; LIGHT COMMUNICATION; SILICON;

D O I：

10.3390/nano11113092

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This letter reports room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diodes. Unlike conventional distributed Bragg feedback laser diodes with hundreds of gratings, we employed only a few precisely defined slot gratings to narrow the linewidth and mitigate the negative effects of grating fabrication on the device performance. The slot gratings were incorporated into the ridge of conventional Fabry-Perot cavity laser diodes. A subsequent wet etching in a tetramethyl ammonium hydroxide solution not only effectively removed the damages induced by the dry etching, but also converted the rough and tilted slot sidewalls into smooth and vertical ones. As a result, the threshold current was reduced by over 20%, and the reverse leakage current was decreased by over three orders of magnitude. Therefore, the room-temperature electrically pumped narrow-linewidth GaN-on-Si laser diode has been successfully demonstrated.

引用

页数：8

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