ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C -: Part I:: Processing

被引：9

作者：

Alluri, P

Majhi, P

Tang, D

Dey, SK

机构：

[1] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Chem Bio & Mat Engn, Tempe, AZ 85287 USA

来源：

INTEGRATED FERROELECTRICS | 1998年 / 21卷 / 1-4期

关键词：

ECR; CVD; (Ba; Sr)TiO3; SrTiO3; direct liquid injection; design of experiments;

D O I：

10.1080/10584589808202072

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SrTiO3 (or ST) and (Ba, Sr)TiO3 (or BST) thin films were deposited on Pt passivated Si substrates below 400 degrees C, using beta-diketonates of Ba, Sr, and Ti, electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (CVD), and direct liquid injection system. Reported here are results from various thin-film characterization techniques including TEM and SEM. To optimize the processing parameters with respect to phase purity, Sr/Ti ratio, and permittivity, the method of design of experiments was implemented. The as-deposited (at 390 degrees C), unannealed ST films exhibited a permittivity of 120 and an ohmic contact with the bottom Pt electrode. The former was attributed to the small grain size (150-200 Angstrom) and presence of Sr rich second phases. The latter was related to the observed incubation period at the initial nucleation stages of film growth.

引用

页码：305 / 318

页数：14

共 7 条

[1]

ALLURI PV, 1997, J INTEGRATED FERROEL, V18, P645

[2]

ALLURI PV, 1994, THESIS ARIZONA STATE

[3] MOCVD OF HIGH-T-C SUPERCONDUCTING MATERIALS [J].