InGaP/GaAs HBT/PIN technology for 20 Gb/s and 40 Gb/s OEICs

被引:0
|
作者
Mu, JH [1 ]
Feng, M [1 ]
机构
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源
TERAHERTZ AND GIGAHERTZ ELECTRONICS AND PHOTONICS II | 2000年 / 4111卷
关键词
HBT; PIN; OEIC; receiver array; trans-impedance amplifier;
D O I
10.1117/12.422144
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
With increasing demands for wireless data transfer, networking, graphics, and high-speed communications using the Internet. 10 Gb/s and 40 Gb/s are expected to become the standard fiber-optic operating speed for the future datacommunication and telecommunication systems. In this paper, photoreceivers using PIN/HBT are investigated for 20 Gb/s and 40 Gb/s OEIC applications. A 20-Gb/s and a 40 Gb/s short wavelength PIN/HBT photoreceivers (PIN_TZ_1L4and PIN_TZ_1L1_L) are presented. Implemented using f(tau)= 60 GHz InGaP/GaAs HBT technology, PIN_TZ_1L4 has simulated 3-dB bandwidth of 17.4 GHz with 43.3 dB Omega gain using a 25-mum diameter PIN photodetector. PIN_TZ_1L1_L using inductor peaking technique has simulated -3 dB bandwidth of 33.5 GHz with 49.3 dB Omega gain using a 10-mum diameter PIN photodetector. By using multi-channel Wavelength Division Multiplexing (WDM) receiver, we are designing two-dimension receiver arrays (2x2) that are capable of receiving data rate of 80 Gb/s or higher. Fabrication and measurement of the new designs are currently under way.
引用
收藏
页码:182 / 191
页数:10
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