Al2O3 surface passivation and MOS-gate fabrication on AlGaN/GaN high-electron-mobility transistors without Al2O3 etching process

被引：1

作者：

Kim, Jeong-Jin ^{[1
,2
]}

Park, Young-Rak ^{[2
]}

Jang, Hyun-Gyu ^{[2
,3
]}

Na, Je-Ho ^{[2
]}

Lee, Hyun-Soo ^{[4
]}

Ko, Sang-Choon ^{[2
]}

Jung, Dong-Yun ^{[2
]}

Lee, Hyung-Seok ^{[2
]}

Mun, Jae-Kyoung ^{[2
,3
]}

Lim, Jing-Hong ^{[1
]}

Yang, Jeon-Wook ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Dept Semicond Sci & Technol, Jeonju 561756, South Korea

[2] Elect & Telecommun Res Inst, Taejon 305700, South Korea

[3] Univ Sci & Technol, Dept Adv Device Engn, Taejon 305350, South Korea

[4] Dankook Univ, Dept Elect & Elect Engn, Yongin 448701, Gyeonggi, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 03期

关键词：

FIELD-EFFECT TRANSISTORS; CURRENT COLLAPSE; HEMT; OXIDE; GAN; VOLTAGE; HFETS;

D O I：

10.7567/JJAP.54.038003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al2O3 passivation by thermal oxidation of aluminium on AlGaN/GaN high-electron-mobility transistors (HEMTs) without Al2O3 etching is proposed. The deposition of a 5-nm-thick Al film was carried out, followed by a lift-off process to remove Al from the ohmic and contact pad area. Subsequently, the Al film was annealed under O-2 ambient. When the gate bias was -7V, the gate leakage currents of a conventional nonpassivated HEMT, a surface-passivated Schottky-gate HEMT, and a surface-passivated MOS-HEMT were determined as 140, 96, and 4.1 mu A/mm, respectively. The current collapse phenomenon in the Al2O3-surface-passivated devices was evidently suppressed compared with that in the nonpassivated HEMT. (C) 2015 The Japan Society of Applied Physics

引用

页数：3

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