Gate-refreshable nanowire chemical sensors

被引：347
作者：
Fan, ZY
Lu, JG [1 ]
机构：
[1] Univ Calif Irvine, Dept Chem Engn & Mat Sci, Irvine, CA 92697 USA
[2] Univ Calif Irvine, Dept Elect Engn & Comp Sci, Irvine, CA 92697 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 12期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.1883715
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
ZnO nanowire field effect transistors were implemented as highly sensitive chemical sensors for detection of NO2 and NH3 at room temperature. Due to a Debye screening length comparable to the nanowire diameter, the electric field applied over the back gate electrode was found to significantly affect the sensitivity as it modulates the carrier concentration. A strong negative field was utilized to refresh the sensors by an electrodesorption mechanism. In addition, different chemisorbed species could be distinguished from the "refresh" threshold voltage and the temporal response of the conductance. These results demonstrated a refreshable field effect sensor with a potential gas identification function. (C) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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