Thin film transistors with wurtzite ZnO channels grown on Si3N4/SiO2/Si (111) substrates by pulsed laser deposition

被引：1
作者：
Rogers, D. J. [1 ]
Sandana, V. E. [1 ,2 ]
Teherani, F. Hosseini [1 ]
Razeghi, M. [2 ]
机构：
[1] Nanovat SARL, 103B Rue Versailles, F-91400 Orsay, France
[2] Northwestern Univ, Ctr Quantum Dev, Evanston, IL USA
来源：
OXIDE-BASED MATERIALS AND DEVICES | 2010年 / 7603卷
关键词：
ZnO; Pulsed Laser Deposition; Thin Film Transistor;
D O I：
10.1117/12.848512
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Thin Film Transistors (TFT) were made by growing ZnO on Si3N4/SiO2/Si (111) substrates by pulsed laser deposition. X-ray diffraction and scanning electron microscope studies revealed the ZnO to have a polycrystalline wurtzite structure with a smooth surface, good crystallographic quality and a strong preferential c-axis orientation. Transmission studies in similar ZnO layers on glass substrates showed high transmission over the whole visible spectrum. Electrical measurements of a back gate geometry FET showed an enhancement-mode response with hard saturation, mA range Id and a V-ON similar to 0V. When scaled down, such TFTs may be of interest for high frequency applications.
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页数：5
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