The formation of stacking fault tetrahedra in Al and Cu II SFT growth by successive absorption of vacancies generated by dipole annihilation

被引：37

作者：

Wang, H. ^{[1
]}

Xu, D. S. ^{[1
]}

Yang, R. ^{[1
]}

Veyssiere, P. ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China

[2] Off Natl Etud & Rech Aerosp, LEM, CNRS, F-92322 Chatillon, France

来源：

ACTA MATERIALIA | 2011年 / 59卷 / 01期

关键词：

Stacking fault tetrahedron; Dislocation dipole; Dislocation annihilation; Molecular dynamics simulations; Vacancy cluster; TENSILE PROPERTIES; DISLOCATION DYNAMICS; SINGLE-CRYSTALS; ATOMIC-SCALE; FCC METALS; PART I; COPPER; ENERGY; LOOPS; TRANSFORMATION;

D O I：

10.1016/j.actamat.2010.07.044

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of stacking fault tetrahedra (SFTs) resulting from dipole annihilation is investigated by molecular dynamics (MD) simulations The atomistic processes Involved during growth immediately after nucleation are studied Analyzed for up to three vacancies the site preference of vacancies on a perfect SFT favors vacancy segregation at edge centers and corners in Cu and Al, respectively The formation of small sized SFTs does not require a prior triangular Frank loop Instead, SFT growth involves vacancies and their clusters agglomerating as complex faceted configurations which assisted by accelerated vacancy migration along SFT edges rearrange into near perfect and perfect SFTs SFT growth by the ledge mechanism is investigated in Part III (C) 2010 Acta Materialia Inc Published by Elsevier Ltd All rights reserved

引用

页码：10 / 18

页数：9

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