Field emission performance of SiC nanowires directly grown on graphite substrate

被引：44

作者：

Chen, Jianjun ^{[1
,2
]}

Shi, Qiang ^{[2
]}

Tang, Weihua ^{[1
]}

机构：

[1] Zhejiang Sci Tech Univ, Ctr Optoelect Mat & Devices, Hangzhou 310018, Peoples R China

[2] Zhejiang Sci Tech Univ, Minist Educ, Key Lab Adv Text Mat & Mfg Technol, Hangzhou 310018, Peoples R China

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2011年 / 126卷 / 03期

关键词：

Semiconductors; Crystal growth; Electron microscopy; Field emission; SILICON-CARBIDE NANOWIRES; NANOSTRUCTURES; SCALE;

D O I：

10.1016/j.matchemphys.2010.12.066

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lawn-like SiC nanowire arrays were successfully synthesized on graphite substrates by thermal evaporation of silicon powders at high temperature. The morphology, microstructure and composition of the nanowires were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. The product grown on graphite substrates was hexagonal prism-shaped single-crystal 3C-SiC nanowires with high aspect ratio. Planar defects, such as microtwins and stacking faults were observed in SiC nanowires. Field emission measurements of the SiC nanowires grown on graphite substrate showed a very low threshold field of 2.1 V mu m(-1), high brightness and stable field emission performance. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：655 / 659

页数：5

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