Electrochemical, microstructural, compositional and optical characterization of copper oxide and copper sulfide thin films

被引:5
|
作者
Thanikaikarasan, Sethuramachandran [1 ]
Perumal, Rajagembu [1 ]
Sankaranarayanan, Krishnasamy [2 ]
Mahalingam, Thaiyan [2 ]
机构
[1] Saveetha Inst Med & Tech Sci, Dept Phys, Saveetha Sch Engn, Madras 602105, Tamil Nadu, India
[2] Alagappa Univ, Sch Phys, Karaikkudi 630004, Tamil Nadu, India
关键词
CU2O;
D O I
10.1007/s10854-018-9109-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, we have focused the effect of substrate on electrochemically grown copper oxide and copper sulfide thin films. The prepared films have been subjected to X-ray diffraction, scanning electron microscopy, Energy dispersive X-ray analysis, UV-Visible spectroscopic techniques for the determination crystalline nature, morphology, composition and optical properties. X-ray diffraction results indicated the deposited films exhibited cubic structure with most reflection along (110), (220) planes for copper oxide and copper sulfide. Scanning electron microscopy along with energy dispersive analysis by X-rays showed that films with uniform morphology and nearly stoichiometry have been obtained for film obtained on SnO2 substrate. Optical absorption and transmittance measurements showed that the deposited films exhibited band gap value of 2.28 and 2.45 eV for copper oxide and copper sulfide.
引用
收藏
页码:15529 / 15534
页数:6
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