Diffusing behavior of MoO3 on Al2O3 and SiO2 thin films

被引：11
|
作者：
Xu, WM
Yan, JF
Wu, NZ [1 ]
Zhang, HX
Xie, YC
Tang, YQ
Zhu, YF
机构：
[1] Peking Univ, Inst Chem Phys, State Key Lab Struct Chem Unstable Species, Beijing 100871, Peoples R China
[2] Tsing Hua Univ, Anal Ctr, Beijing 100084, Peoples R China
来源：
SURFACE SCIENCE | 2000年 / 470卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
molybnenum oxides; aluminum oxide; silicon oxides; diffusion and migration; X-ray photoelectron spectroscopy; secondary ion mass spectroscopy; synchrotron radiation photoelectron spectroscopy;
D O I：
10.1016/S0039-6028(00)00847-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
By means of XPS, SIMS, synchrotron radiation excited total-reflection X-ray fluorescence, AES etc., the diffusion process of MoO3 on stable Al2O3 and SiO2 oxide thin films was investigated. After thermal treatment, MoO3 formed a monolayer or a submonolayer on the hat surface of the thin films. The diffusion capacity and the diffusion rate on these two kinds of films differ significantly. Besides the support used, several factors, such as the heating temperature, the heating time and the ambience influence the diffusion process. A possible explanation to all the phenomena is the combination of surface diffusion and transportation via gas phase. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：121 / 130
页数：10
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