High-Q bulk micromachined silicon cavity resonator at Ka-band

被引：20

作者：

Stickel, M ^{[1
]}

Eleftheriades, GV ^{[1
]}

Kremer, P ^{[1
]}

机构：

[1] Univ Toronto, Edward S Rogers Sr Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 07期

关键词：

D O I：

10.1049/el:20010313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel hulk silicon micromachining technique for fabricating millimetre-wave waveguide components is presented. This technique enables the formation or Jeep three-dimensional stacked structures of almost constant cross-section as well as post wafer-bonding metallisation that reduces thr effects uf air gaps and contact resistances. With these innovations it is possible to realise high-Q devices with low-cost fabrication. Simulated and measured results For a 30GHz silicon cavity resonator are presented.

引用

页码：433 / 435

页数：3

共 6 条

[1]

Brown AR, 1999, INT J RF MICROW C E, V9, P326, DOI 10.1002/(SICI)1099-047X(199907)9:4<326::AID-MMCE4>3.0.CO

[2]

2-Y

[3] Characterization of high-Q resonators for microwave-filter applications [J].

Kwok, RS ;

Liang, JF .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (01) :111-114

[4]

Madou M., 1997, Fundamentals of Microfabrication

[5] Silicon micromachined waveguides for millimeter-wave and submillimeter-wave frequencies [J].

McGrath, William R. ;

Walker, Christopher ;

Yap, Markus ;

Tai, Yu-Chong .

IEEE Microwave and Guided Wave Letters, 1993, 3 (03) :61-63

[6] A micromachined high-Q X-band resonator [J].

Papapolymerou, J ;

Cheng, JC ;

East, J ;

Katehi, LPB .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1997, 7 (06) :168-170

← 1 →