Crack detection in single-crystalline silicon wafers using impact testing

被引:28
作者
Hilmersson, C. [1 ]
Hess, D. P. [1 ]
Dallas, W. [1 ]
Ostapenko, S. [1 ]
机构
[1] Univ S Florida, Tampa, FL 33620 USA
关键词
silicon wafer; solar cell; crack; detection; audible; vibration;
D O I
10.1016/j.apacoust.2007.03.002
中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
This paper presents acoustic measurements obtained by mechanically exciting vibratory modes in single-crystalline silicon wafers with hairline periphery cracks of different type and location. The data presented shows a dependence of natural frequencies, peak amplitudes and damping levels of four audio vibration modes in the frequency range up to 1000 Hz on crack type and crack location. Data from defective wafers exhibit lower natural frequencies, higher damping levels, and lower peak amplitudes. The results suggest ail impact test method may be useful for solar cell crack detection and quality control. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码:755 / 760
页数:6
相关论文
共 8 条
[1]  
[Anonymous], 2004, Proceedings of PV Solar conference
[2]  
[Anonymous], 1980, Engineering applications of correlation and spectral analysis
[3]   Crack detection and analyses using resonance ultrasonic vibrations in full-size crystalline silicon wafers [J].
Belyaev, A ;
Polupan, O ;
Dallas, W ;
Ostapenko, S ;
Hess, D ;
Wohlgemuth, J .
APPLIED PHYSICS LETTERS, 2006, 88 (11)
[4]   Resonance ultrasonic vibration diagnostics of elastic stress in full-size silicon wafers [J].
Belyaev, A ;
Polupan, O ;
Ostapenko, S ;
Hess, D ;
Kalejs, JP .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (03) :254-260
[5]   Audible vibration diagnostics of thermo-elastic residual stress in multi-crystalline silicon wafers [J].
Best, SR ;
Hess, DP ;
Belyaev, A ;
Ostapenko, S ;
Kalejs, JP .
APPLIED ACOUSTICS, 2006, 67 (06) :541-549
[6]   Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence [J].
Fuyuki, T ;
Kondo, H ;
Yamazaki, T ;
Takahashi, Y ;
Uraoka, Y .
APPLIED PHYSICS LETTERS, 2005, 86 (26) :1-3
[7]  
Rueland E., 2005, PROC 20 EU PVSEC BAR, P3242
[8]   Photoluminescence imaging of silicon wafers [J].
Trupke, T. ;
Bardos, R. A. ;
Schubert, M. C. ;
Warta, W. .
APPLIED PHYSICS LETTERS, 2006, 89 (04)