Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors

被引:1
|
作者
Ackaert, J
Wang, Z
De Backer, E
Colson, P
Coppens, P
机构
[1] Alcatel Microelect, B-9700 Oudenaarde, Belgium
[2] MESA, NL-7500 AE Enschede, Netherlands
关键词
D O I
10.1016/S0026-2714(01)00158-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, charging induced damage (CID) to metal-insulator-metal-capacitor (MIMC), is reported. The damage is caused by the build up of charges on an oxide surface during a water rinsing step. The excessive charging over a large capacitor area results in a discharge over the inter metal dielectric layer (IMD) towards a grounded structure, This CID leads to direct severe yield loss. The charging has been detected, measured and reduced with the help of a non contact surface potential measurement. In this way further yield losses have been prevented. A model for the relation between the surface charging potential and the voltage difference between the capacitor and the grounded structure is presented. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1403 / 1407
页数:5
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