Influence of an Annealing Temperature in a Vacuum Atmosphere on the Physical Properties of Indium Tin Oxide Nanorod Films

被引:1
作者
Charoenyuenyao, Peerasil [1 ]
Promros, Nathaporn [1 ]
Chaleawpong, Rawiwan [1 ]
Noymaliwan, Pitoon [1 ]
Borwornpornmetee, Nattakorn [1 ]
Kamoldilok, Surachart [1 ]
Porntheeraphat, Supanit [2 ]
Saekow, Bunpot [2 ]
Chaikeeree, Tanapoj [3 ]
Samransuksamer, Benjarong [4 ]
Nuchuay, Peerapong [3 ]
Chananonnawathorn, Chanunthorn [3 ]
Limwichean, Saksorn [3 ]
Horprathum, Mati [3 ]
Eiamchai, Pitak [3 ]
Patthanasettakul, Viyapol [3 ]
机构
[1] King Mongkuts Inst Technol Ladkrabang, Fac Sci, Dept Phys, Bangkok 10520, Thailand
[2] Natl Elect & Comp Technol Ctr NECTEC, Photon Technol Lab, Pathum Thani 12120, Thailand
[3] Natl Elect & Comp Technol Ctr NECTEC, Opt Thin Film Lab, Pathum Thani 12120, Thailand
[4] King Mongkuts Univ Technol Thonburi, Fac Sci, Dept Phys, Bangkok 10140, Thailand
关键词
ITO Nanorod Films; Vacuum Annealing; Ion-Assisted Electron-Beam Evaporation; Glancing Angle Deposition; Physical Properties; ELECTRON-BEAM EVAPORATION; ITO THIN-FILMS; OPTICAL-PROPERTIES; LIGHT-EXTRACTION; ENHANCEMENT; SURFACE; DEPOSITION; ZNO; TRANSMISSION; WETTABILITY;
D O I
10.1166/jnn.2020.17840
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In the present study, indium tin oxide (ITO) nanorod films were produced by usage of ion-assisted electron-beam evaporation with a glancing angle deposition technique. The as-produced ITO nanorod films were annealed in the temperature range of 100-500 degrees C for two hours in a vacuum atmosphere. The as-produced ITO nanorod films exhibited (222) and (611) preferred orientations from the X-ray diffraction pattern. After vacuum annealing at 500 degrees C, the ITO nanorod films demonstrated many preferred orientations and the improvement of film crystallinity. The sheet resistance of the as-produced ITO nanorod films was 11.92 Omega/square and was found to be 13.63 Omega/square by annealing at 500 degrees C. The as-produced and annealed ITO nanorod films had a rod diameter of around 80 nm and transmittance in a visible zone of around 90%. The root mean square roughness of the as-produced ITO nanorod film's surface was 5.49 nm, which increased to 13.77 nm at an annealing temperature of 500 degrees C. The contact angle of the as-produced ITO nanorod films was 110.9 degrees and increased to 116.5 degrees after annealing at 500 degrees C.
引用
收藏
页码:5006 / 5013
页数:8
相关论文
共 46 条
  • [11] Range of Applicability of the Wenzel and Cassie-Baxter Equations for Superhydrophobic Surfaces
    Erbil, H. Yildirim
    Cansoy, C. Elif
    [J]. LANGMUIR, 2009, 25 (24) : 14135 - 14145
  • [12] Modification and Wettability Study ITO Glass Coated with ZnO Film by Electrochemical Deposition and Hydrothermal Deposition
    Fang, Mei
    Zou, Changwei
    Gong, Manfeng
    [J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (03) : 3039 - 3044
  • [13] Electrical and optical properties of electron beam evaporated ITO thin films
    George, J
    Menon, CS
    [J]. SURFACE & COATINGS TECHNOLOGY, 2000, 132 (01) : 45 - 48
  • [14] Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films
    Goncalves, G.
    Elangovan, E.
    Barquinha, P.
    Pereira, L.
    Martins, R.
    Fortunato, E.
    [J]. THIN SOLID FILMS, 2007, 515 (24) : 8562 - 8566
  • [15] Role of annealing temperature on microstructural and electro-optical properties of ITO films produced by sputtering
    Gulen, M.
    Yildirim, G.
    Bal, S.
    Varilci, A.
    Belenli, I.
    Oz, M.
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (02) : 467 - 474
  • [16] Effects of heat treatment on properties of ITO films prepared by rf magnetron sputtering
    Hu, YL
    Diao, XG
    Wang, C
    Hao, WC
    Wang, TM
    [J]. VACUUM, 2004, 75 (02) : 183 - 188
  • [17] Functional pattern engineering in glancing angle deposition thin films
    Jensen, MO
    Brett, MJ
    [J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2005, 5 (05) : 723 - 728
  • [18] Surface treatment and characterization of ITO thin films using atmospheric pressure plasma for organic light emitting diodes
    Jung, Mi-Hee
    Choi, Ho-Suk
    [J]. JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2007, 310 (02) : 550 - 558
  • [19] Electrical, optical, and structural properties of indium-tin-oxide thin films for organic light-emitting devices
    Kim, H
    Gilmore, CM
    Piqué, A
    Horwitz, JS
    Mattoussi, H
    Murata, H
    Kafafi, ZH
    Chrisey, DB
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) : 6451 - 6461
  • [20] Light-extraction enhancement of GaInN light-emitting diodes by graded-refractive-index indium tin oxide anti-reflection contact
    Kim, Jong Kyu
    Chhajed, Sameer
    Schubert, Martin F.
    Schubert, E. Fred
    Fischer, Arthur J.
    Crawford, Mary H.
    Cho, Jaehee
    Kim, Hyunsoo
    Sone, Cheolsoo
    [J]. ADVANCED MATERIALS, 2008, 20 (04) : 801 - +