ULSI technology development trend

被引：0

作者：

Okuto, Y ^{[1
]}

Kunio, T ^{[1
]}

机构：

[1] Nagoya City Univ, Ctr Nat Sci, Mizuho Ku, Nagoya, Aichi, Japan

来源：

2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Owing to the progress of various technology, integration scale and performance of ULSI is making continuous progress. However, depending on progress stage, main area of development has been varied. Lately, fine-scale CMOS, interconnect technology and non-volatile memory are the main area of interest. In this paper, present technology development trend on these areas will be discussed.

引用

页码：3 / 9

页数：7

共 13 条

[1] AMANUMA K, 1999, 1999 SSDM TOK, P384
[2] AMANUMA K, 1998, 1998 IEEE IEDM, P363
[3] HAYASHI Y, 1999, 1999 IITC, P100
[4] INOUE N, 1999, 1999 SSDM TOK, P392
[5] Kawahara J., 1999, 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325), P45, DOI 10.1109/VLSIT.1999.799332
[6] Loke A. L. S., 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216), P26, DOI 10.1109/VLSIT.1998.689185
[7] Shiba K., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P101, DOI 10.1109/IEDM.1999.823856
[8] TAGAMI M, 1999, 1999 IEDM, P635
[9] Tsuji K., 1999, 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325), P9, DOI 10.1109/VLSIT.1999.799314
[10] TSUJI K, 2000, 5 M ULTR SIO2, P75

← 1 2 →