Acousto-helicon interaction in narrow-gap semiconductors

被引:0
作者
Ghosh, KK [1 ]
Paul, SN [1 ]
机构
[1] JADAVPUR UNIV,FAC SCI,CTR PLASMA STUDIES,CALCUTTA 700032,W BENGAL,INDIA
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1996年 / 197卷 / 02期
关键词
D O I
10.1002/pssb.2221970218
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A theoretical investigation is made on the propagation of acousto-helicon waves through plasmas in narrow-gap semiconducting piezoelectric crystals. Interaction coupling of the acousto-helicon mode sets up at lower frequencies in the small-gap semiconductors as compared to that in wide-gap ones. This is because of the strong dependence of the electron effective mass on the nonparabolicity of the conduction band of the semiconductors. Results are also shown for wide-gap semiconductors for the sake of comparison.
引用
收藏
页码:441 / 446
页数:6
相关论文
共 50 条
  • [21] NONLINEAR OPTICAL COEFFICIENTS OF NARROW-GAP SEMICONDUCTORS
    YOUNGDALE, ER
    HOFFMAN, CA
    MEYER, JR
    BARTOLI, FJ
    HAN, JW
    COOK, JW
    SCHETZINA, JF
    ENGELHARDT, MA
    NILES, EW
    HOCHST, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02): : 1215 - 1220
  • [22] THz lasers based on narrow-gap semiconductors
    Gavrilenko, V. I.
    Morozov, S. V.
    Rumyantsev, V. V.
    Bovkun, L. S.
    Kadykov, A. M.
    Maremyanin, K. V.
    Umbetalieva, K. R.
    Chizhevskii, E. G.
    Zasavitskii, I. I.
    Mikhailov, N. N.
    Dvoretskii, S. A.
    2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON), 2016,
  • [23] POLARON EFFECT IN ELECTROABSORPTION OF NARROW-GAP SEMICONDUCTORS
    KRYUCHKOV, SV
    YAKOVLEV, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 75 - 76
  • [24] MAGNETIC SUSCEPTIBILITY OF SEMIMETALS AND NARROW-GAP SEMICONDUCTORS
    MISRA, PK
    KLEINMAN, L
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (03): : 315 - &
  • [25] DIELECTRIC-PROPERTIES OF NARROW-GAP SEMICONDUCTORS
    KUMAZAKI, K
    JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 687 - 690
  • [26] THE DIELECTRIC-CONSTANT IN NARROW-GAP SEMICONDUCTORS
    TRZECIAKOWSKI, W
    BAJ, M
    SOLID STATE COMMUNICATIONS, 1984, 52 (07) : 669 - 671
  • [27] LASER EPITAXY AND PROPERTIES OF NARROW-GAP SEMICONDUCTORS
    PLYATSKO, SV
    GROMOVOJ, YS
    SIZOV, FF
    DARCHUK, SD
    UKRAINSKII FIZICHESKII ZHURNAL, 1990, 35 (07): : 1064 - 1066
  • [28] Electronic and optoelectronic devices in narrow-gap semiconductors
    Ashley, T
    NARROW GAP SEMICONDUCTORS 1995, 1995, (144): : 345 - 352
  • [29] AUGER RECOMBINATION IN NARROW-GAP SEMICONDUCTORS.
    Gel'mont, B.L.
    Soviet physics. Semiconductors, 1980, 14 (10): : 1140 - 1142
  • [30] POSITRON-ANNIHILATION IN NARROW-GAP SEMICONDUCTORS
    BOUARISSA, N
    WEST, RN
    AOURAG, H
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1995, 188 (02): : 723 - 734