MEMS-based thermoelectric infrared sensors: A review

被引:96
作者
Xu, Dehui [1 ]
Wang, Yuelin [1 ]
Xiong, Bin [1 ]
Li, Tie [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Sci & Technol Microsyst Lab, Shanghai 200050, Peoples R China
基金
中国国家自然科学基金;
关键词
thermoelectric infrared sensor; CMOS-MEMS; thermopile; micromachining; wafer-level package; STATE TEMPERATURE DISTRIBUTION; THERMOPILE IR DETECTOR; RADIATION SENSOR; CMOS TECHNOLOGY; MICROSENSORS; PERFORMANCE; ARRAY; DESIGN; LAYER; OPTIMIZATION;
D O I
10.1007/s11465-017-0441-2
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
In the past decade, micro-electromechanical systems (MEMS)-based thermoelectric infrared (IR) sensors have received considerable attention because of the advances in micromachining technology. This paper presents a review of MEMS-based thermoelectric IR sensors. The first part describes the physics of the device and discusses the figures of merit. The second part discusses the sensing materials, thermal isolation microstructures, absorber designs, and packaging methods for these sensors and provides examples. Moreover, the status of sensor implementation technology is examined from a historical perspective by presenting findings from the early years to the most recent findings.
引用
收藏
页码:557 / 566
页数:10
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