A Fully Analog Two-way Sequential GaN Power Amplifier with 40% Fractional Bandwidth

被引：4

作者：

Shao, Jin ^{[1
,2
]}

Ma, Rui ^{[1
]}

Teo, Koon Hoo ^{[1
]}

Shinjo, Shintaro ^{[3
]}

Yamanaka, Koji ^{[3
]}

机构：

[1] MERL, Cambridge, MA 02139 USA

[2] Univ North Texas, Denton, TX 76203 USA

[3] Mitsubishi Electr Corp, Informat Tech R&D Ctr, Kamakura, Kanagawa 2478501, Japan

来源：

2015 IEEE INTERNATIONAL WIRELESS SYMPOSIUM (IWS 2015) | 2015年

关键词：

Sequential power amplifier; broadband; GaN; Efficiency; 4G;

D O I：

10.1109/IEEE-IWS.2015.7164561

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report a two-way sequential power amplifier (SPA) using GaN HEMTs. The proposed fully analog SPA delivers Psat of approximately 40dBm over 2-3 GHz covering 40% fractional bandwidth. The design consists of a 3dB input coupler, a main amplifier, a peak amplifier, and a 10dB output coupler for power combining. After proper designing and optimizing these critical wideband couplers in terms of both phase and amplitude alignment, the measured final SPA shows 45% to 61 % drain efficiency (DE) at 35dBm (5dB backoff) output from 2.1 to 2.9 GHz under CW stimulus. A complete set of SPA with analog RF input and output network is demonstrated.

引用

页数：3

共 7 条

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