Reliability of Ferroelectric Random Access Memory Embedded within 130nm CMOS

被引：54

作者：

Rodriguez, J. ^{[1
]}

Remack, K. ^{[1
]}

Gertas, J. ^{[1
]}

Wang, L. ^{[1
]}

Zhou, C. ^{[1
]}

Boku, K. ^{[1
]}

Rodriguez-Latorre, J. ^{[1
]}

Udayakumar, K. R. ^{[1
]}

Summerfelt, S. ^{[1
]}

Moise, T. ^{[1
]}

Kim, D. ^{[2
]}

Groat, J. ^{[2
]}

Eliason, J.

Depner, M. ^{[2
]}

Chu, F. ^{[2
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75265 USA

[2] RAMTRON Int Corp, Colorado Springs, CO 80921 USA

来源：

2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年

关键词：

embedded memory; ferroelectric memory reliability; cycling endurance; data retention; high-temperature operating life; sof-error rate; FATIGUE; MODEL; FILMS;

D O I：

10.1109/IRPS.2010.5488738

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present results of a comprehensive reliability evaluation of a 2T-2C, 4Mb, Ferroelectric Random Access Memory embedded within a standard 130nm, 5LM Cu CMOS platform. Wear-out free endurance to 5.4x10(13) cycles and data retention equivalent of 10 years at 85 degrees C is demonstrated. The results show that the technology can be used in a wide range of applications including embedded processing.

引用

页码：750 / 758

页数：9

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