Effect of Li-doping on low temperature solution-processed indium-zinc oxide thin film transistors

被引：24

作者：

Han, Soo-Yeun ^{[1
]}

Manh-Cuong Nguyen ^{[1
]}

An Hoang Thuy Nguyen ^{[1
]}

Choi, Jae-Won ^{[1
]}

Kim, Jung-Youn ^{[1
]}

Choi, Rino ^{[1
]}

机构：

[1] Inha Univ, Dept Mat Sci & Engn, 100 Inha Ro, Incheon, South Korea

来源：

THIN SOLID FILMS | 2017年 / 641卷

基金：

新加坡国家研究基金会;

关键词：

Indium zinc oxide; Oxide semiconductor; Solution metal oxide; Lithium; Thin film transistor; HIGH-PERFORMANCE; ROOM-TEMPERATURE; MOBILITY;

D O I：

10.1016/j.tsf.2017.05.024

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lithium (Li)-doped indium zinc oxide (IZO) thin film transistors (TFTs) were fabricated on solution-processed zirconium oxide gate dielectrics using a low temperature all solution process. Li-doping in IZO thin films led to higher crystallinity, even at process temperature lower than 300 degrees C, and to the formation of favorable oxidation states of metal ions. The results were confirmed by electrical property analysis of the Li-doped IZO TFTs. For Li content varied from 0 to 16.6 at.%, the highest field-effect mobility, on/off current ratio, subthreshold slope and stress bias stability were obtained for Li-doping concentration of 9.0 mol%. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：19 / 23

页数：5

共 30 条

[1] A review on the recent developments of solution processes for oxide thin film transistors [J].

Ahn, Byung Du ;

Jeon, Hye-Ji ;

Sheng, Jiazhen ;

Park, Jozeph ;

Park, Jin-Seong .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (06)

[2] Inkjet Printed, High Mobility Inorganic-Oxide Field Effect Transistors Processed at Room Temperature [J].

Dasgupta, Subho ;

Kruk, Robert ;

Mechau, Norman ;

Hahn, Horst .

ACS NANO, 2011, 5 (12) :9628-9638

[3] Enhancement of Electrical Stability in IGZO Thin-Film Transistors Inserted with an IZO Layer Grown by Atomic Layer Deposition [J].

Ding, Xingwei ;

Li, Sheng ;

Song, Jiantao ;

Zhang, Jianhua ;

Jiang, Xueyin ;

Zhang, Zhilin .

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2017, 12 (03) :273-277

[4] Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances [J].

Fortunato, E. ;

Barquinha, P. ;

Martins, R. .

ADVANCED MATERIALS, 2012, 24 (22) :2945-2986

[5] Low-temperature preparation of (002)-oriented ZnO thin films by sol-gel method [J].

Guo, Dongyun ;

Sato, Kuninori ;

Hibino, Shingo ;

Takeuchi, Tetsuya ;

Bessho, Hisami ;

Kato, Kazumi .

THIN SOLID FILMS, 2014, 550 :250-258

[6] Low-Temperature, High-Performance, Solution-Processed Indium Oxide Thin-Film Transistors [J].

Han, Seung-Yeol ;

Herman, Gregory S. ;

Chang, Chih-hung .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2011, 133 (14) :5166-5169

[7] An 'aqueous route' for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates [J].

Hwang, Young Hwan ;

Seo, Jin-Suk ;

Yun, Je Moon ;

Park, HyungJin ;

Yang, Shinhyuk ;

Park, Sang-Hee Ko ;

Bae, Byeong-Soo .

NPG ASIA MATERIALS, 2013, 5 :e45-e45

[8] Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides [J].

Jariwala, Deep ;

Sangwan, Vinod K. ;

Lauhon, Lincoln J. ;

Marks, Tobin J. ;

Hersam, Mark C. .

ACS NANO, 2014, 8 (02) :1102-1120

[9] Enhanced mobility of Li-doped ZnO thin film transistors fabricated by mist chemical vapor deposition [J].

Jeon, Hye-ji ;

Lee, Seul-Gi ;

Kim, H. ;

Park, Jin-Seong .

APPLIED SURFACE SCIENCE, 2014, 301 :358-362

[10] Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor [J].

Jung, Hong Yoon ;

Kang, Youngho ;

Hwang, Ah Young ;

Lee, Chang Kyu ;

Han, Seungwu ;

Kim, Dae-Hwan ;

Bae, Jong-Uk ;

Shin, Woo-Sup ;

Jeong, Jae Kyeong .

SCIENTIFIC REPORTS, 2014, 4

← 1 2 3 →