A common power-stage cellular/PCS/W-CDMA triple-band MMIC power amplifier

被引：0

作者：

Kim, KY ^{[1
]}

Kim, JH ^{[1
]}

Noh, YS ^{[1
]}

Park, CS ^{[1
]}

机构：

[1] Informat & Commun Univ, Sch Engn, Taejon 305732, South Korea

来源：

BOSTON 2003 RADIO & WIRELESS RAWCON CONFERENCE, PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the design and experimental results of an InGap/GaAs hetero-junction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifier for cellular(850MHz)/PCS(1950MHz)/W-CDMA(1950MHz) triple-band mobile terminal applications. This two-stage power amplifier has only one power-stage in common for the triple bands to achieve a small chip and module size for low manufacturing cost. In order to reduce quiescent current for cellular band, the band selecting circuit to control bias current is used to the power-stage amplifier. This power amplifier has the power gain of 30dB(26dB,25dB) for cellular(PCS,W-CDMA) band and power-added efficiency (PAE) of 43% at the output power of 28dBm for cellular band under 3.4V operation voltage.

引用

页码：285 / 288

页数：4

共 4 条

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