Quantum Hall Effect in a System of Gapless Dirac Fermions in HgTe Quantum Wells

被引：17

作者：

Kozlov, D. A. ^{[1
,2
]}

Kvon, Z. D. ^{[1
,2
]}

Mikhailov, N. N. ^{[1
]}

Dvoretskii, S. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

JETP LETTERS | 2015年 / 100卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

JETP Letter; Filling Factor; Gate Voltage; Landau Level; HgTe;

D O I：

10.1134/S0021364014230076

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The specific features of the quantum Hall effect (QHE) in a system of gapless Dirac fermions in HgTe quantum wells have been studied. It has been established that the behavior of the QHE is asymmetric with respect to the Dirac point: at the lowest temperature (0.2 K), quantization of hole fermions occurs in weak magnetic fields down to 0.15 T, whereas quantization of the electron part of the Dirac cone occurs only in fields of about 0.5 T. Such an asymmetry is caused by the effect of sideband maxima in the valence band forming the heavy-hole valleys, which play the role of a reservoir and screen out the fluctuation potential. The analysis of the behavior of the dissipative component of the conductivity near the Dirac point has led to a conclusion on the existence of the zeroth Landau level at this point.

引用

页码：724 / 730

页数：7

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