Ge n+/p Junctions With High ON-to-OFF Current Ratio by Surface Passivation

被引：3

作者：

Liu, Tony Chi ^{[1
]}

Ikegaya, Hiroki ^{[1
]}

Nishimura, Tomonori ^{[1
]}

Toriumi, Akira ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Tokyo 1138656, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 07期

关键词：

Germanium; junction; leakage; passivation; surface; YGO; GERMANIUM;

D O I：

10.1109/LED.2016.2575841

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The large junction leakage current in Ge CMOS is one of the most critical issues of our time. If the Ge surface is not well passivated, the surface leakage current may dominate. In this letter, thanks to the well-passivated surface by 10%-yttrium-doped GeO2 (YGO), Ge n(+)/p junctions showed much lower leakage than the SiO2-passivated ones and an ON-to-OFF current ratio more than 3x106 at 1 V was achieved. Our result indicates that the high junction leakage current so far reported may not be intrinsic, and further reduction of the leakage current may be possible in Ge n(+)/p junctions.

引用

收藏

页码：847 / 850

页数：4

相关论文

共 19 条

[1] Enhanced Ge n+/p Junction Performance Using Cryogenic Phosphorus Implantation [J].

Bhatt, Piyush ;

Swarnkar, Prashant ;

Misra, Abhishek ;

Biswas, Jayeeta ;

Hatem, Christopher ;

Nainani, Aneesh ;

Lodha, Saurabh .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (01) :69-74

[2]

Claeys C., 2007, GERMANIUM BASED TECH, P239

[3] High-Performance Ge nMOSFETs With n+-p Junctions Formed by "Spin-On Dopant" [J].

Jamil, M. ;

Mantey, J. ;

Onyegam, E. U. ;

Carpenter, G. D. ;

Tutuc, E. ;

Banerjee, S. K. .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (09) :1203-1205

[4]

Jung W. S., 2014, THESIS

[5] Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application [J].

Jung, Woo-Shik ;

Park, Jin-Hong ;

Nainani, Aneesh ;

Nam, Donguk ;

Saraswat, Krishna C. .

APPLIED PHYSICS LETTERS, 2012, 101 (07)

[6] Multiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near the theoretical limit [J].

Kim, Jeehwan ;

Bedell, Stephen W. ;

Sadana, Devendra K. .

APPLIED PHYSICS LETTERS, 2012, 101 (11)

[7] Improved germanium n+/p junction diodes formed by coimplantation of antimony and phosphorus [J].

Kim, Jeehwan ;

Bedell, Stephen W. ;

Sadana, Devendra K. .

APPLIED PHYSICS LETTERS, 2011, 98 (08)

[8]

Lee C. H., 2014 IEEE INT ELECT, DOI [10.1109/IEDM.2014.7047156, DOI 10.1109/IEDM.2014.7047156]

[9] A hybrid of electromagnetism-like mechanism and back-propagation algorithms for recurrent neural fuzzy systems design [J].

Lee, Ching-Hung ;

Chang, Fu-Kai ;

Kuo, Che-Ting ;

Chang, Hao-Hang .

INTERNATIONAL JOURNAL OF SYSTEMS SCIENCE, 2012, 43 (02) :231-247

[10] High-Electron-Mobility Ge/GeO2 n-MOSFETs With Two-Step Oxidation [J].

Lee, Choong Hyun ;

Nishimura, Tomonori ;

Nagashio, Kosuke ;

Kita, Koji ;

Toriumi, Akira .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (05) :1295-1301