Polarization fatigue in PbZr0.45Ti0.55O3-based capacitors studied from high resolution synchrotron x-ray diffraction -: art. no. 064108

被引:34
作者
Menou, N [1 ]
Muller, C
Baturin, IS
Shur, VY
Hodeau, JL
机构
[1] Univ Sud Toulon Var, UMR CNRS 6137, Lab Mat & Microelect Prov, F-83957 La Garde, France
[2] Ural State Univ, Inst Phys & Appl Math, Ekaterinburg 620083, Russia
[3] CNRS, Cristallog Lab, F-38042 Grenoble, France
关键词
D O I
10.1063/1.1870098
中图分类号
O59 [应用物理学];
学科分类号
摘要
High resolution synchrotron x-ray diffraction experiments were performed on (111)-oriented PbZr0.45Ti0.55O3-based capacitors with a composition in the morphotropic region. Diffraction analyzes were done after bipolar pulses were applied and removed, representing several places in the cyclic switching. Microstructural changes were evidenced from relative diffracted intensities variations of several Bragg reflections and a correlation with the evolution of the ferroelectric responses has been established. First, a peculiar microstructural evolution was observed during the first 3x10(4) switching cycles and was attributed to the so-called "wake-up" effect. On the other hand, the onset of the fatigue phenomenon was accompanied by significant variations on integrated diffraction intensities. Several mechanisms are proposed and discussed to explain such variations. Finally, the ferroelectric responses were analyzed after x-ray diffraction experiments and compared with those measured before exposure. A detailed analysis has shown that both domain configuration and switching process are strongly influenced by x-ray irradiation. It can be considered that x rays act as a "revealer" of the domain structure created during the preceding electrical treatment. (C) 2005 American Institute of Physics.
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页数:6
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