Electrical and optical properties of Al doped cadmium oxide thin films deposited by radio frequency magnetron sputtering

被引：172

作者：

Saha, B. ^{[1
]}

Das, S. ^{[1
]}

Chattopadhyay, K. K. ^{[1
]}

机构：

[1] Jadavpur Univ, Dept Phys, Thin Film & Nanosci Lab, Kolkata 700032, India

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2007年 / 91卷 / 18期

关键词：

cadmium oxide; RF sputtering; AFM; XPS; optical properties; electrical conductivity;

D O I：

10.1016/j.solmat.2007.05.025

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Cadmium oxide thin films with different percentages of aluminum doping have been synthesized via radio frequency magnetron sputtering technique. Thin films were deposited on glass and silicon substrates with different percentages of aluminum at a substrate temperature of 573 K and pressure of 0.1 mbar in Ar + O-2 atmosphere. The deposited films were characterized by studying their structural. electrical and optical properties. The X-ray diffraction pattern revealed good crystallinity with preferred (111) orientation in the films. Aluminum doping in CdO thin films were confirmed by X-ray photoelectron spectroscopic studies and actual doping percentages were also measured from it. The optical band gap was found to decrease first and then increase with increasing percentages of aluminum concentrations. The electrical conductivity was found to increase with increase of aluminum doping concentration up to 5% but for higher doping concentration (> 5%) the conductivity was found to decrease. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：1692 / 1697

页数：6

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