Study of the pyrolysis of tertiarybutylhydrazine and GaN film growth

被引：11
作者：
Nishide, S
Yoshimura, T
Takamatsu, Y
Ichige, A
Pak, K
Ohshima, N
Yonezu, H
机构：
[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 441, Japan
[2] Japan Pion Co Ltd, Res Lab, Hiratsuka, Kanagawa 254, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷
关键词：
tertiarybutylhydrazine; GaN; MOVPE; pyrolysis; sapphire substrate;
D O I：
10.1016/S0022-0248(98)00279-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Tertiarybutylhydrazine (TBHy) is one of the alternative nitrogen sources to ammonia. We investigated pyrolysis of TBHy using quadrupole mass spectrometer and grew GaN films on (0 0 0 1) sapphire substrates by low-pressure metal-organic vapor-phase epitaxy. TBHy drastically began to decompose from similar to 400 degrees C and was totally decomposed at similar to 800 degrees C. Single-crystalline layers of GaN with good surface morphology were obtained at the growth temperature of similar to 930 degrees C. The decomposition of the C4H9NH component from TBHy might be ii dominant process for the film growth at relatively higher temperature. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：325 / 329
页数：5
相关论文
共 9 条
[1]   GROWTH OF GAN FILMS USING TRIMETHYLGALLIUM AND HYDRAZINE [J].
GASKILL, DK ;
BOTTKA, N ;
LIN, MC .
APPLIED PHYSICS LETTERS, 1986, 48 (21) :1449-1451
[2]   Initial growth stage of GaN on Si substrate by alternating source supply using dimethyl-hydrazine [J].
Hashimoto, A ;
Aiba, Y ;
Motizuki, T ;
Ohkubo, M ;
Yamamoto, A .
JOURNAL OF CRYSTAL GROWTH, 1997, 175 :129-133
[3]  
ISHII M, I PHYS C SER, V142, P889
[4]   Surface morphology and carbon incorporation for hexagonal GaN/(111)B GaAs metalorganic vapor phase epitaxy using dimethylhydrazine and trimethylgallium [J].
Kobayashi, Y ;
Scholz, F ;
Kobayashi, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (5A) :2592-2595
[5]   GROWTH KINETICS AND CATALYTIC EFFECTS IN VAPOR-PHASE EPITAXY OF GALLIUM NITRIDE [J].
LIU, SS ;
STEVENSON, DA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) :1161-1169
[6]  
MIYOSHI S, 1992, J CRYST GROWTH, V124, P432
[7]   Preparation of GaN films on sapphire by metalorganic chemical vapor deposition using dimethylhydrazine as nitrogen source [J].
Sato, H ;
Takahashi, H ;
Watanabe, A ;
Ota, H .
APPLIED PHYSICS LETTERS, 1996, 68 (25) :3617-3619
[8]  
STRINGFELLOW GB, 1989, ORGANOMETALLIC VAPOR, P174
[9]   Crystal structure of GaN grown on 3C-SiC substrates by metalorganic vapor phase epitaxy [J].
Wu, J ;
Yaguchi, H ;
Nagasawa, H ;
Yamaguchi, Y ;
Onabe, K ;
Shiraki, Y ;
Ito, R .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (7A) :4241-4245
1