Study of high breakdown-voltage AlGaN/GaN FP-HEMT

被引：8

作者：

Guo Liang-Liang ^{[1
]}

Qian, Feng ^{[1
]}

Yue, Hao ^{[1
]}

Yan, Yang ^{[1
]}

机构：

[1] Xidian Univ, Inst Microelect, Key Lab Minist Educ Wide Band Gap Semicond Mat &, Xian 710071, Peoples R China

来源：

ACTA PHYSICA SINICA | 2007年 / 56卷 / 05期

关键词：

AlGaN/GaN; HEMT; field plate; breakdown voltage;

D O I：

10.7498/aps.56.2895

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Fabrication and the characteristics at room temperature of FP-HEMT are reported, followed by a comparison of the actual characteristics with the conventional HEMT. With the incorporation of field plate, the breakdown voltage was enhanced from 52 to 142 V. Comparison between AlGaN/GaN FP-HEMT and the conventional HEMT are also made, using Silvaco, as the simulation tool. The effect of enhancing the breakdown voltage is also investigated.

引用

页码：2895 / 2899

页数：5

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