Plasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETs

被引：4

作者：

Rao, VR ^{[1
]}

Wijeratne, G ^{[1
]}

Chu, D ^{[1
]}

Brozek, T ^{[1
]}

Viswanathan, CR ^{[1
]}

机构：

[1] Univ Calif Los Angeles, EE Dept, Los Angeles, CA 90095 USA

来源：

1998 3RD INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE | 1998年

关键词：

D O I：

10.1109/PPID.1998.725590

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The effect of plasma damage on the MOSFET's flicker noise properties is examined in this work. We observe an abnormal noise peak in the 1/f noise spectrum at around 2 KHz which is a characteristic of the plasma damage. The dependence of noise peak on the plasma induced degradation was studied in virgin n- and p-channel MOSFETs and this peak is shown to correlate well with the amount of damage in the p-MOSFETs.

引用

页码：124 / 127

页数：4