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Atmospheric Pressure Plasma Discharge for Polysiloxane Thin Films Deposition and Comparison with Low Pressure Process
被引:42
作者:
Siliprandi, Riccardo A.
[1
]
Zanini, Stefano
[1
]
Grimoldi, Elisa
[1
]
Fumagalli, Francesco S.
[1
]
Barni, Ruggero
[1
]
Riccardi, Claudia
[1
]
机构:
[1] Univ Milano Bicocca, Dipartimento Fis G Occhialini, I-20126 Milan, Italy
关键词:
Plasma-enhanced chemical vapour deposition;
Hexamethyldisiloxane;
Polysiloxane;
Dielectric barrier discharge;
Low pressure glow discharge;
DIELECTRIC BARRIER DISCHARGE;
GLOW-DISCHARGE;
HEXAMETHYLDISILOXANE FILMS;
POLYETHYLENE TEREPHTHALATE;
SILENT DISCHARGE;
COATINGS;
GAS;
POLYMERIZATION;
DIAGNOSTICS;
TRANSITION;
D O I:
10.1007/s11090-011-9286-3
中图分类号:
TQ [化学工业];
学科分类号:
0817 ;
摘要:
An atmospheric pressure dielectric barrier plasma discharge has been used to study a thin film deposition process. The DBD device is enclosed in a vacuum chamber and one of the electrodes is a rotating cylinder. Thus, this device is able to simulate continuous processing in arbitrary deposition condition of pressure and atmosphere composition. A deposition process of thin organosilicon films has been studied reproducing a nitrogen atmosphere with small admixtures of hexamethyldisiloxane (HMDSO) vapours. The plasma discharge has been characterized with optical emission spectroscopy and voltage-current measurements. Thin films chemical composition and morphology have been characterized with FTIR spectroscopy, atomic force microscopy (AFM) and contact angle measurements. A strong dependency of deposit character from the HMDSO concentration has been found and then compared with the same dependency of a typical low pressure plasma enhanced chemical vapour deposition process.
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页码:353 / 372
页数:20
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