Atmospheric Pressure Plasma Discharge for Polysiloxane Thin Films Deposition and Comparison with Low Pressure Process

被引：42

作者：

Siliprandi, Riccardo A. ^{[1
]}

Zanini, Stefano ^{[1
]}

Grimoldi, Elisa ^{[1
]}

Fumagalli, Francesco S. ^{[1
]}

Barni, Ruggero ^{[1
]}

Riccardi, Claudia ^{[1
]}

机构：

[1] Univ Milano Bicocca, Dipartimento Fis G Occhialini, I-20126 Milan, Italy

来源：

PLASMA CHEMISTRY AND PLASMA PROCESSING | 2011年 / 31卷 / 02期

关键词：

Plasma-enhanced chemical vapour deposition; Hexamethyldisiloxane; Polysiloxane; Dielectric barrier discharge; Low pressure glow discharge; DIELECTRIC BARRIER DISCHARGE; GLOW-DISCHARGE; HEXAMETHYLDISILOXANE FILMS; POLYETHYLENE TEREPHTHALATE; SILENT DISCHARGE; COATINGS; GAS; POLYMERIZATION; DIAGNOSTICS; TRANSITION;

D O I：

10.1007/s11090-011-9286-3

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

An atmospheric pressure dielectric barrier plasma discharge has been used to study a thin film deposition process. The DBD device is enclosed in a vacuum chamber and one of the electrodes is a rotating cylinder. Thus, this device is able to simulate continuous processing in arbitrary deposition condition of pressure and atmosphere composition. A deposition process of thin organosilicon films has been studied reproducing a nitrogen atmosphere with small admixtures of hexamethyldisiloxane (HMDSO) vapours. The plasma discharge has been characterized with optical emission spectroscopy and voltage-current measurements. Thin films chemical composition and morphology have been characterized with FTIR spectroscopy, atomic force microscopy (AFM) and contact angle measurements. A strong dependency of deposit character from the HMDSO concentration has been found and then compared with the same dependency of a typical low pressure plasma enhanced chemical vapour deposition process.

引用

页码：353 / 372

页数：20

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