Atmospheric Pressure Plasma Discharge for Polysiloxane Thin Films Deposition and Comparison with Low Pressure Process

被引：41
作者：
Siliprandi, Riccardo A. [1 ]
Zanini, Stefano [1 ]
Grimoldi, Elisa [1 ]
Fumagalli, Francesco S. [1 ]
Barni, Ruggero [1 ]
Riccardi, Claudia [1 ]
机构：
[1] Univ Milano Bicocca, Dipartimento Fis G Occhialini, I-20126 Milan, Italy
来源：
PLASMA CHEMISTRY AND PLASMA PROCESSING | 2011年 / 31卷 / 02期
关键词：
Plasma-enhanced chemical vapour deposition; Hexamethyldisiloxane; Polysiloxane; Dielectric barrier discharge; Low pressure glow discharge; DIELECTRIC BARRIER DISCHARGE; GLOW-DISCHARGE; HEXAMETHYLDISILOXANE FILMS; POLYETHYLENE TEREPHTHALATE; SILENT DISCHARGE; COATINGS; GAS; POLYMERIZATION; DIAGNOSTICS; TRANSITION;
D O I：
10.1007/s11090-011-9286-3
中图分类号：
TQ [化学工业];
学科分类号：
0817 ;
摘要：
An atmospheric pressure dielectric barrier plasma discharge has been used to study a thin film deposition process. The DBD device is enclosed in a vacuum chamber and one of the electrodes is a rotating cylinder. Thus, this device is able to simulate continuous processing in arbitrary deposition condition of pressure and atmosphere composition. A deposition process of thin organosilicon films has been studied reproducing a nitrogen atmosphere with small admixtures of hexamethyldisiloxane (HMDSO) vapours. The plasma discharge has been characterized with optical emission spectroscopy and voltage-current measurements. Thin films chemical composition and morphology have been characterized with FTIR spectroscopy, atomic force microscopy (AFM) and contact angle measurements. A strong dependency of deposit character from the HMDSO concentration has been found and then compared with the same dependency of a typical low pressure plasma enhanced chemical vapour deposition process.
引用
收藏
页码：353 / 372
页数：20
相关论文
共 51 条
  • [1] [Anonymous], 1991, GAS DISCHARGE PHYS
  • [2] Implementation of a Rogowski coil for the measurement of partial discharges -: art. no. 065107
    Argüeso, M
    Robles, G
    Sanz, J
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2005, 76 (06)
  • [3] Deposition of Organosilicon-Based Anticorrosion Layers on Galvanized Steel by Atmospheric Pressure Dielectric Barrier Discharge Plasma
    Bardon, Julien
    Bour, Jerome
    Aubriet, Hugues
    Ruch, David
    Verheyde, Bert
    Dams, Roel
    Paulussen, Sabine
    Rego, Robby
    Vangeneugden, Dirk
    [J]. PLASMA PROCESSES AND POLYMERS, 2007, 4 : S445 - S449
  • [4] BARNI R, 2008, IAEA P, V17, P1
  • [5] Becker KH., 2005, Non-Equilibrium Air Plasmas at Atmospheric Pressure
  • [6] Biederman H., 2004, PLASMA POLYM FILMS
  • [7] Silicon carbonitride by remote microwave plasma CVD from organosilicon precursor:: Physical and mechanical properties of deposited Si:C:N films
    Blaszczyk-Lezak, I.
    Wrobel, A. M.
    [J]. APPLIED SURFACE SCIENCE, 2007, 253 (18) : 7404 - 7411
  • [8] Determination of the vibrational, rotational and electron temperatures in N2 and Ar-N2 rf discharge
    Britun, N.
    Gaillard, M.
    Ricard, A.
    Kim, Y. M.
    Kim, K. S.
    Han, J. G.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (04) : 1022 - 1029
  • [9] Diagnostics and insights on PECVD for gas-barrier coatings
    Creatore, M
    Palumbo, F
    d'Agostino, R
    [J]. PURE AND APPLIED CHEMISTRY, 2002, 74 (03) : 407 - 411
  • [10] RF plasma deposition of SiO2-like films:: plasma phase diagnostics and gas barrier film properties optimisation
    Creatore, M
    Palumbo, F
    d'Agostino, R
    Fayet, P
    [J]. SURFACE & COATINGS TECHNOLOGY, 2001, 142 : 163 - 168
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