Atmospheric Pressure Plasma Discharge for Polysiloxane Thin Films Deposition and Comparison with Low Pressure Process

被引：41
|
作者：
Siliprandi, Riccardo A. [1 ]
Zanini, Stefano [1 ]
Grimoldi, Elisa [1 ]
Fumagalli, Francesco S. [1 ]
Barni, Ruggero [1 ]
Riccardi, Claudia [1 ]
机构：
[1] Univ Milano Bicocca, Dipartimento Fis G Occhialini, I-20126 Milan, Italy
来源：
PLASMA CHEMISTRY AND PLASMA PROCESSING | 2011年 / 31卷 / 02期
关键词：
Plasma-enhanced chemical vapour deposition; Hexamethyldisiloxane; Polysiloxane; Dielectric barrier discharge; Low pressure glow discharge; DIELECTRIC BARRIER DISCHARGE; GLOW-DISCHARGE; HEXAMETHYLDISILOXANE FILMS; POLYETHYLENE TEREPHTHALATE; SILENT DISCHARGE; COATINGS; GAS; POLYMERIZATION; DIAGNOSTICS; TRANSITION;
D O I：
10.1007/s11090-011-9286-3
中图分类号：
TQ [化学工业];
学科分类号：
0817 ;
摘要：
An atmospheric pressure dielectric barrier plasma discharge has been used to study a thin film deposition process. The DBD device is enclosed in a vacuum chamber and one of the electrodes is a rotating cylinder. Thus, this device is able to simulate continuous processing in arbitrary deposition condition of pressure and atmosphere composition. A deposition process of thin organosilicon films has been studied reproducing a nitrogen atmosphere with small admixtures of hexamethyldisiloxane (HMDSO) vapours. The plasma discharge has been characterized with optical emission spectroscopy and voltage-current measurements. Thin films chemical composition and morphology have been characterized with FTIR spectroscopy, atomic force microscopy (AFM) and contact angle measurements. A strong dependency of deposit character from the HMDSO concentration has been found and then compared with the same dependency of a typical low pressure plasma enhanced chemical vapour deposition process.
引用
收藏
页码：353 / 372
页数：20
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