Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors

被引：0
|
作者：
Zhang, Xiang [1 ,2 ,3 ]
Li, Yudong [1 ,2 ]
Wen, Lin [1 ,2 ]
Feng, Jie [1 ,2 ]
Zhou, Dong [1 ,2 ]
Cai, Yulong [1 ,2 ,3 ]
Liu, Bingkai [1 ,2 ,3 ]
Fu, Jing [1 ,2 ,3 ]
Guo, Qi [1 ,2 ]
机构：
[1] Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Urumqi, Peoples R China
[2] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
[3] Univ Chinese Acad Sci, Beijing, Peoples R China
来源：
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY | 2020年 / 57卷 / 09期
基金：
中国国家自然科学基金; 中国科学院西部之光基金;
关键词：
14-MeV neutron; neutron irradiation; radiation damage; radiation effect; SILICON;
D O I：
10.1080/00223131.2020.1751323
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
BackSide-Illuminated (BSI) CMOS Image Sensors (CISs), with developed performance on quantum efficiency and sensitivity, have been applied for aerospace missions and gradually replaced FrontSide-Illuminated (FSI) CISs. Two types of BSI CISs with different epitaxial layer thicknesses were irradiated by 14-MeV neutron up to 3.40 x 10(11) n/cm(2) to analyze the degradation induced by neutron irradiation. Dark current, dark current distribution, full well capacity, and spectral response were tested before and after the neutron irradiation and at different annealing time points with various temperatures. The results were analyzed to characterize the degradation introduced by the unique backside passivation layer, and the converse illuminated direction. The interface states induced by displacement damage effects at the backside passivation layer were considered as a novel origin of dark current which was not involved in FSI CISs.
引用
收藏
页码：1015 / 1021
页数：7
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