Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides

被引：30

作者：

Cai, Hui ^{[1
]}

Soignard, Emmanuel ^{[2
]}

Ataca, Can ^{[3
]}

Chen, Bin ^{[1
]}

Ko, Changhyun ^{[4
]}

Aoki, Toshihiro ^{[2
]}

Pant, Anupum ^{[1
]}

Meng, Xiuqing ^{[1
]}

Yang, Shengxue ^{[5
]}

Grossman, Jeffrey ^{[3
]}

Ogletree, Frank D. ^{[6
,7
]}

Tongay, Sefaattin ^{[1
]}

机构：

[1] Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA

[2] Arizona State Univ, LeRoy Eyring Ctr Solid State Sci, Tempe, AZ 85287 USA

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[4] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[5] Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China

[6] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

[7] Lawrence Berkeley Natl Lab, Mol Foundry, Berkeley, CA 94720 USA

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 34期

基金：

美国国家科学基金会;

关键词：

2D materials; band engineering; van der Waals epitaxy; DER-WAALS EPITAXY; VAPOR-PHASE GROWTH; VAN; STRAIN; GAP; CRYSTALLINE; MONOLAYER; LAYERS; FILMS; PHOTODETECTORS;

D O I：

10.1002/adma.201601184

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Atomically thin quasi-2D GaSe flakes are synthesized via van der Waals (vdW) epitaxy on a polar Si (111) surface. The bandgap is continuously tuned from its commonly accepted value at 620 down to the 700 nm range, only attained previously by alloying Te into GaSe (GaSexTe1-x). This is accomplished by manipulating various vdW epitaxy kinetic factors, which allows the choice bet ween screw-dislocation-driven and layer-bylayer growth, and the design of different morphologies with different material-substrate interaction (strain) energies.

引用

页码：7375 / 7382

页数：8

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