White luminescence emission from silicon implanted germanium

被引：17

作者：

Guadalupe Hernandez, Angelica ^{[1
]}

Escobosa Escobosa-Echavarria, Arturo ^{[1
]}

Kudriavtsev, Yuriy ^{[1
]}

机构：

[1] CINVESTAV, IPN, Elect Engn Dept, Solid State Elect Sect, Av IPN 2508, San Pedro Zacatenco 07360, DF, Mexico

来源：

APPLIED SURFACE SCIENCE | 2018年 / 428卷

关键词：

Ion implantation; SIMS depth profile; Germanium bombardment; White luminescence; VISIBLE PHOTOLUMINESCENCE; OPTICAL-PROPERTIES; GE; SI; NANOPARTICLES; LAYER; OXIDE; NANOCRYSTALS; DEPOSITION;

D O I：

10.1016/j.apsusc.2017.09.234

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Germanium crystals were implanted with low-energy and high-dose silicon ions. The implantation led to amorphization of a near-surface layer due to the formation of many adatoms and vacancies. Adatoms can be absorbed in germanium by the amorphous matrix faster than vacancies. The excess of vacancies and their ability to cluster resulted in formation of a porous structure beneath the surface. Pores of different sizes and depths were observed experimentally. A subsequent thermal annealing was carried out at 973 K in order to repair the damage due to the implantation. The annealing resulted, among other things, in oxidation of the pores. Visible white luminescence was observed for the as-implanted samples at the 325 nm excitation wavelength; the photoluminescence intensity increased after the annealing. The optical properties were attributed to the combined effects of different defects and the formation of germanium oxides with oxygen deficiencies. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：1098 / 1105

页数：8

共 53 条

[1] Electrodeposition of Ge, Si and SixGe1-x from an air- and water-stable ionic liquid [J].