Mechanisms of resistive switching in BiFeO3 thin films modulated by bottom electrode

被引：20

作者：

Liu, Ying ^{[1
]}

Qi, Yajun ^{[1
]}

Zhou, Peng ^{[1
]}

Guan, Changxin ^{[1
]}

Chen, Hao ^{[1
]}

Wang, Jinzhao ^{[1
]}

Ma, Zhijun ^{[1
,2
]}

Zhang, Tianjin ^{[1
]}

Liu, Yuan ^{[3
]}

机构：

[1] Hubei Univ, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Key Lab Green Preparat & Applicat Mat, Minist Educ,Hubei Prov Key Lab Polymers,Dept Mat, Wuhan 430062, Hubei, Peoples R China

[2] Hubei Univ, Key Lab Synth & Applicat Organ Funct Mol, Minist Educ, Wuhan 430062, Hubei, Peoples R China

[3] Natl Graphene Prod Inspect & Supervis Ctr, Wuxi 214174, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2018年 / 51卷 / 02期

基金：

中国国家自然科学基金;

关键词：

resistive switching; conductive filaments; ferroelectric polarization; Schottky barrier;

D O I：

10.1088/1361-6463/aa9ae4

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

BiFeO3 thin films were fabricated by pulsed laser deposition on Nb-SrTiO3 (0 0 1), La2/3Sr1/3MnO3/SrTiO3 (0 0 1), and SrRuO3/SrTiO3 (0 0 1) electrode surfaces. All films grew epitaxially along the substrates and were fully strained. The current-voltage curves of the structures revealed that the current level depended on the barrier height at the ferroelectric/bottom electrode interface. Resistive switching behavior was observed in the BiFeO3 films grown on all electrodes, which was rationalized in terms of conductive filaments and the variation of the Schottky barrier at the ferroelectric/electrode interfaces due to ferroelectric polarization. The conductive filament model and modulation of the Schottky barriers at film/electrode interfaces due to ferroelectric polarization applied to BiFeO3 films on SrRuO3 and La2/3Sr1/3MnO3 electrodes, respectively, while a combination of these two mechanisms was suggested to be responsible for the observed resistive switching of BiFeO3 film on Nb-SrTiO3.

引用

页数：6

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