Strain field of InAs QDs on GaAs(001) substrate surface: characterization by synchrotron X-ray Renninger scanning

被引：6
|
作者：
Morelhao, SL [1 ]
Avanci, LH [1 ]
Freitas, R [1 ]
Quivy, AA [1 ]
机构：
[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
来源：
MICROELECTRONICS JOURNAL | 2005年 / 36卷 / 3-6期
关键词：
quantum dots; X-ray diffraction; optoelectronic devices; nanomaterials;
D O I：
10.1016/j.mejo.2005.02.010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Precise lattice parameter measurements in single crystals are achievable, in principle, by X-ray multiple diffraction (MD) experiments. Tiny sample misalignments can compromise systematic usage of MD in studies where accuracy is an important issue. In this work, theoretical treatment and experimental methods for correcting residual misalignment errors are presented and applied to probe the induced strain of buried InAs quantum dots on GaAs (001) substrates. (c) 2005 Published by Elsevier Ltd.
引用
收藏
页码：219 / 222
页数：4
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