LD end-pumped Nd: YVO4 high energy high beam quality 1064 nm picosecond laser with a semiconductor saturable absorber mirror

被引：4

作者：

He, Huan ^{[1
]}

Liu, Xuesheng ^{[1
]}

Song, Yiheng ^{[2
]}

Wang, Congcong ^{[1
]}

Cao, Mingzhen ^{[1
]}

Yan, Anru ^{[1
]}

Wang, Zhiyong ^{[1
]}

机构：

[1] Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China

[2] China Elect Technol Grp Corp, Res Inst 53, Tianjin 300000, Peoples R China

来源：

OPTIK | 2018年 / 175卷

基金：

国家重点研发计划;

关键词：

Solid-state laser; Laser seed source; End-pump laser; Picosecond laser;

D O I：

10.1016/j.ijleo.2018.08.130

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A high-power 808 nm diode-directly-pumped passively mode-locked 1064nm Nd:YVO4 laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). Through theory analysis and carefully experimental optimization of laser mode radii in the laser crystal and on the SESAM. An average output power of 3.39 W and single pulse energy of 0.115 mu J was obtained with a pulse width of 16.3ps and a repetition rate of 29.36 MHz under a pump power of 8.92 W, corresponding to an optic-optic efficiency of 38.0% and the high beam quality in the x, y direction was 1.12 and 1.07, respectively.

引用

页码：172 / 176

页数：5