Semiconducting AgSbSe2 thin film and its application in a photovoltaic structure

被引：42

作者：

Bindu, K ^{[1
]}

Campos, J ^{[1
]}

Nair, MTS ^{[1
]}

Sánchez, A ^{[1
]}

Nair, PK ^{[1
]}

机构：

[1] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Dept Solar Energy Mat, Temixco 62580, Morelos, Mexico

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 06期

关键词：

D O I：

10.1088/0268-1242/20/6/004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of AgSbSe2 have been prepared by heating a Sb2S3-Ag stack, with the Ag side in contact with a chemically deposited Se thin film, which served as a planar-source,of Se. vapour. A two-state, process,consisting of the formation of an Ag2Se film through the reaction of a vacuum deposited Ag film in the Se vapour at about 80 degrees C, and its reaction at 300 degrees C with a chemically deposited Sb2S3 film, results in the formation of the AgSbSe2 film. X-ray diffraction studies illustrate the structural evolution in the formation of this film. The material possesses an indirect optical band gap of about 0.9 eV. Thermoelectric measurements on the films showed a Seebeck coefficient of 500 mu V K-1 (p-type), and thus a hole concentration of similar to 10(22) m(-3). The feasibility of application of these films as a photovoltaic absorber material is illustrated for the structure SnO2-CdS-(i)Sb2S3(p)AgSbSe2, in which an open circuit voltage of 530 mV has been observed under an intensity of illumination of 2 kW m(-2) using a tungsten-halogen lamp.

引用

页码：496 / 504

页数：9

共 18 条

[11] Semiconductor thin films by chemical bath deposition for solar energy related applications [J].