Low-Stress and Optimum Design of Boost Converter for Renewable Energy Systems

被引:10
|
作者
Salim, Kashmala [1 ]
Asif, Muhammad [2 ]
Ali, Farman [1 ]
Armghan, Ammar [3 ]
Ullah, Nasim [4 ]
Mohammad, Al-Sharef [4 ]
Al Ahmadi, Ahmad Aziz [4 ]
机构
[1] Qurtuba Univ Sci & IT, Dept Elect Engn, Dera Ismail Khan 29050, Pakistan
[2] Univ Sci & Technol, Dept Elect Engn, Main Campus, Bannu 28100, Pakistan
[3] Jouf Univ, Coll Engn, Dept Elect Engn, Sakaka 72388, Saudi Arabia
[4] Taif Univ, Coll Engn, Dept Elect Engn, POB 888, Al Hawiyah, Saudi Arabia
关键词
DC-DC converters; Flyback boost converter using Si-MOSFET switch technology; Flyback boost converter using GaN-HEMT switch technology; DC-DC CONVERTER;
D O I
10.3390/mi13071085
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
This paper examines the design and analysis of DC-DC converters for high-power and low-voltage applications such as renewable energy sources (RESs) and comparisons between converters based on switch stresses and efficiency. The RESs including photovoltaic arrays and fuel cell stacks must have enhanced output voltages, such as 380 V DC in the case of a full bridge inverter or 760 V DC in the case of a half bridge inverter, in order to interface with the 220 V AC grid-connected power system. One of the primary difficulties in developing renewable energy systems is enhancing DC-DC converters' efficiency to enable high step-up voltage conversion with high efficiency and low voltage stress. In the present work, the efficiency, current, and voltage stress of switches of an isolated Flyback boost converter, simple DC-DC Boost converter, and an Interleaved boost converter, are explored and studied relatively. The most suitable and optimized options with a high efficiency and low switching stress are investigated. The more suitable topology is designed and analyzed for the switch technology based on the Silicon-Metal Oxide Semiconductor Field Effect Transistor (Si-MOSFET) and the Gallium Nitride-High Electron Mobility Transistor (GaN-HEMT). The Analytical approach is analyzed in this paper based on efficiency and switching stress. It is explored that GaN HEMT based Flyback boost converter is the best. Finally, the future direction for further improving the efficiency of the proposed boost converter is investigated.
引用
收藏
页数:22
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