Electrochemical Deposition of Co-Sb Thin Films and Nanowires

被引:18
作者
Quach, Dat V. [1 ]
Vidu, Ruxandra [1 ]
Groza, Joanna R. [1 ]
Stroeve, Pieter [1 ]
机构
[1] Univ Calif Davis, Dept Chem Engn & Mat Sci, Davis, CA 95616 USA
基金
美国国家科学基金会;
关键词
ELECTRONIC TRANSPORT-PROPERTIES; ATOMIC-FORCE MICROSCOPY; TE-DOPED COSB3; THERMOELECTRIC PROPERTIES; NANO-ISLANDS; ELECTRODEPOSITION; DECAY; INTERFACE; AU(100); SURFACE;
D O I
10.1021/ie101173u
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
Co-Sb thin films and nanowires were grown on gold-coated polymer templates by electrochemical deposition under different potentiostatic conditions from -0.8 to -1.0 V vs Ag/AgCl. The growth of nanowires was 3D and went through several growth stages starting from the gold-coated wall. Overgrowth of nanowires Out of the porous template did not produce a fully dense film; instead, Sb-rich columnar structures (mushroom caps) were developed and connected by Co-rich needle-like structures. Compared to nanowires, the mushroom caps had a lower content of Co. With a more negative deposition potential, the content of Co in the nanowires and the mushroom caps increased. A composition of Co:Sb = 1:3 in nanowires was obtained at a constant deposition potential of -0.965 V.
引用
收藏
页码:11385 / 11392
页数:8
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