Epitaxial growth of M-type Ba-hexaferrite films on MgO (111)∥SiC (0001) with low ferromagnetic resonance linewidths

被引：42
作者：
Chen, Zhaohui
Yang, Aria
Gieler, Antone
Harris, V. G.
Vittoria, C.
Ohodnicki, P. R.
Goh, K. Y.
McHenry, M. E.
Cai, Zhuhua
Goodrich, Trevor L.
Ziemer, Katherine S. [1 ]
机构：
[1] Northeastern Univ, Dept Chem Engn, Boston, MA 02115 USA
[2] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA
[3] Carnegie Mellon Univ, Pittsburgh, PA 15213 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 18期
关键词：
D O I：
10.1063/1.2794011
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Barium hexaferrite (BaM) films were deposited on 10 nm MgO (111) films on 6H silicon carbide (0001) substrates by pulsed laser deposition from a homogeneous BaFe12O19 target. The MgO layer, deposited by molecular beam epitaxy, alleviated lattice mismatch and interdiffusion between film and substrate. X-ray diffraction showed strong crystallographic alignment while pole figures exhibited reflections consistent with epitaxial growth. After optimized annealing, these BaM films have a perpendicular magnetic anisotropy field of 16 900 Oe, a magnetization (as 4 pi M-s) of 4.4 kG, and a ferromagnetic resonance peak-to-peak derivative linewidth at 53 GHz of 96 Oe, thus demonstrating sufficient properties for microwave device applications. (C) 2007 American Institute of Physics.
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