Study of annealed InAs/GaAs quantum dot structures

被引：8

作者：

Qiu, Y. ^{[1
]}

Zhang, Z. Y. ^{[1
]}

Hogg, R. A. ^{[1
]}

Cullis, A. G. ^{[1
]}

Walther, T. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS | 2010年 / 209卷

关键词：

TRANSMISSION ELECTRON-MICROSCOPY; DIFFUSION; SEGREGATION; IMPURITY; LAYERS;

D O I：

10.1088/1742-6596/209/1/012036

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Two similar samples of InAs/GaAs quantum dots and their response to annealing at 700 degrees C have been studied using scanning transmission electron microscopy The only difference m the growth of both samples is the inclusion of p-doping by carbon in the GaAs barriers between the quantum dots in one of the wafers The size and line density of and the change of indium concentration within the quantum dots have been investigated to understand the effect of carbon doping on the diffusion of indium atoms within the structures during the anneal

引用

页数：6

共 8 条

[1] COMPENSATION AND DIFFUSION MECHANISMS OF CARBON DOPANTS IN GAAS [J].

CHEONG, BH ;

CHANG, KJ .

PHYSICAL REVIEW B, 1994, 49 (24) :17436-17439

[2] ATOM DIFFUSION AND IMPURITY-INDUCED LAYER DISORDERING IN QUANTUM WELL III-V SEMICONDUCTOR HETEROSTRUCTURES [J].

DEPPE, DG ;

HOLONYAK, N .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) :R93-R113

[3] Growth and characterization of multi-layer 1.3 μm quantum dot lasers [J].

Mowbray, David ;

Badcock, Tom ;

Sellers, Ian ;

Ramsay, Andrew ;

Skolnick, Maurice ;

Liu, Hui-Yun ;

Hopkinson, Mark ;

Groom, Kristian ;

Hogg, Richard ;

Beanland, Richard ;

Childs, David ;

Robbins, David .

INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 6, NOS 3 AND 4, 2007, 6 (3-4) :291-+

[4] Effect of p and n doping on neutral impurity and SiO2 dielectric cap induced quantum well intermixing in GaAs/AlGaAs structures [J].

Ooi, BS ;

Bryce, AC ;

Marsh, JH ;

Roberts, JS .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (01) :121-127

[5] A new experimental procedure to quantify annular dark field images in scanning transmission electron microscopy [J].

Walther, T .

JOURNAL OF MICROSCOPY-OXFORD, 2006, 221 :137-144

[6] Observation of vertical and lateral Ge segregation in thin undulating SiGe layers on Si by electron energy-loss spectroscopy [J].

Walther, T ;

Humphreys, CJ ;

Cullis, AG .

APPLIED PHYSICS LETTERS, 1997, 71 (06) :809-811

[7] Diffusion and surface segregation in thin SiGe/Si layers studied by scanning transmission electron microscopy [J].

Walther, T ;

Humphreys, CJ ;

Robbins, DJ .

DEFECT AND DIFFUSION FORUM, 1997, 143 :1135-1140

[8] Freestanding (3,0) boron nitride nanotube: Expected to be stable well over room temperature [J].

Zhang, Zhuhua ;

Guo, Wanlin ;

Dai, Yitao .

APPLIED PHYSICS LETTERS, 2008, 93 (22)

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