Structural and optical investigations on CdS thin films grown by chemical bath technique

被引:172
作者
Ramaiah, KS
Pilkington, RD
Hill, AE
Tomlinson, RD
Bhatnagar, AK
机构
[1] Univ Salford, Dept Elect & Elect Engn, Salford M5 4WT, Lancs, England
[2] Univ Salford, Dept Phys, Salford M5 4WT, Lancs, England
[3] Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, India
关键词
CdS thin film; solar cell; TEM; band gap; photoluminescence; chemical bath;
D O I
10.1016/S0254-0584(00)00281-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cadmium sulphide (CdS) thin films have been prepared by using a chemical bath deposition (CBD) method. Structural analysis (XRD and TEM) revealed that the films showed hexagonal structure with lattice constants a=0.4015 nm and c=0.6545 nm. On annealing, the films exhibited secondary phase of beta -CdS (cubic) along with hexagonal phase, but density of dislocations decreased. The stacking faults have been observed in the crystalline arrangement by high resolution transmission electron microscopy (HRTEM). The direct band gaps of as-grown and annealed films were found to be 2.42 and 2.62 eV with sub band gap of 2.35 eV, respectively, which were confirmed by optical analysis. On annealing, the resistivity of the films decreased from 3 x 10(6) to 1 x 10(3) Omega cm. Multiple Cd and S defects were observed by employing photoluminescence (PL) method. The intensities of emission peaks for annealed films differed with that of as-grown films. As was discussed with giving reasons. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:22 / 30
页数:9
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