Microstructure and dielectric properties of hexagonal boron nitride prepared by hot pressing (uniaxial and isostatic) and by spark plasma sintering

被引:7
作者
Almeida, Tatiani Falvo [1 ,2 ]
Goncalves, Marcos Pereira [2 ]
Goldschmidt Aliaga Kiminami, Ruth Herta [1 ,3 ]
机构
[1] Univ Fed Sao Carlos, Grad Program Mat Sci & Engn, BR-13565905 Sao Carlos, SP, Brazil
[2] Engecer Ltda, Sao Carlos, SP, Brazil
[3] Univ Fed Sao Carlos, Dept Mat Engn, Sao Carlos, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
Hexagonal boron nitride; hot pressing; hot isostatic pressing; spark plasma sintering; ORIENTATION;
D O I
10.1080/17436753.2019.1689704
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Owing to the strong covalent B-N bonding and layered structure, complete sintering of h-BN ceramics is quite difficult to attain without using high-pressure and high-temperature processes. In this paper, a commercial pure h-BN powder was sintered by hot pressing (uniaxial - HP and isostatic - HIP) and spark plasma sintering (SPS) aiming at studying the anisometry among microstructures and their influence in the density and in the dielectric properties of this material. The results are compared to a commercial h-BN product in terms of densification, microstructure and dielectrical properties. Samples sintered by hot pressing processes presented microstructures with random alignment of the grains while the samples sintered by SPS showed an aligned microstructure with grains oriented perpendicular to the pressing direction. A higher dielectric constant was observed for the HIP sintered sample and the results of this sample show similar behaviour to the commercial h-BN ceramic component.
引用
收藏
页码:41 / 48
页数:8
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